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Crystal structure and charge-transport properties of N-trimethyltriindole: Novel p-type organic semiconductor single crystals

Authors :
Eva M. García-Frutos
Enrique Gutierrez-Puebla
M. Angeles Monge
Rafael Ramírez
Pedro de Andrés
Alicia de Andrés
Berta Gómez-Lor
Source :
Organic Electronics. 10:643-652
Publication Year :
2009
Publisher :
Elsevier BV, 2009.

Abstract

We report on a new p-type organic semiconductor single crystal, 5,10,15-trimethyl-10,15-dihydro-5H-diindolo[3,2-a:3’,2’-c]carbazole (N-trimethyltriindole). This molecule crystallizes forming a highly ordered columnar structure in which stacked molecules are situated at two alternating distances (3.53 A and 3.68 A) along the column as determined by single crystal X-ray diffraction analysis. These short intermolecular distances between adjacent units, make this system an ideal candidate for charge-transport processes along the stacks. Relevant parameters for transport (i.e. internal reorganization energies, transfer integral) have been estimated by DFT calculations at a 6-311G(d,p)/B3LYP level of theory. As a double check for the transfer integral, the electronic band structure of a one-dimensional stack of molecules has been computed. The electronic properties of this material have been studied both theoretically and experimentally. Its HOMO value is found to coincide with Au work function (ΦAu = 5.1 eV), thus low barriers are expected for hole injection from gold electrodes. The hole mobility of this material has been predicted theoretically considering a hopping-type mechanism for the charge-transport and determined experimentally at the space charge limited current (SCLC) regime of the current–voltage measurements. Both theoretical and experimental values are in good agreement. The high hole mobility (μmin = 0.4 cm2 V−1 s−1) of this material points towards its useful application in the organic electronics arena. N-Trimethyltriindole single crystals constitute an essential model to study transport properties of triindole-based materials and to design new derivatives with improved electronic performance.

Details

ISSN :
15661199
Volume :
10
Database :
OpenAIRE
Journal :
Organic Electronics
Accession number :
edsair.doi...........4d45c93f1d3de4d67e02735d8278475a
Full Text :
https://doi.org/10.1016/j.orgel.2009.02.016