Characterization of Y 2 O 3 ‐ Stabilized ZrO2 Thin Films by Plasma‐Enhanced Metallorganic Chemical Vapor Deposition

Yttria-stabilized zirconia (YSZ) films were deposited on (100) silicon wafers by a plasma-enhanced metallorganic chemical vapor deposition (PEMOCVD) process involving the application of vapor mixtures of bisdipivaloylmethanato yttrium, zirconium tetra-t-butoxide, and oxygen. From the x-ray diffraction (XRD) and transmission electron microscopy (TEM) results, the as-deposited YSZ films were found to be a single cubic phase and the preferred orientation of (100). Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) analyses were performed to determine the Y 2 O 3 mole percentage in YSZ films and this result was compared with that obtained by Aleksandrov model using the lattice constant by x-ray diffraction