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n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers
- Source :
- Applied Physics Letters. 118:021102
- Publication Year :
- 2021
- Publisher :
- AIP Publishing, 2021.
-
Abstract
- In this study, we attempt to identify the presence of surface defects (SDs) at an n-type GaN surface after high-temperature growth and gain insight into their intrinsic features. To this end, first, we carefully investigate n-type GaN samples with different surface etching depths. Low-temperature photoluminescence (PL) spectra reveal that SDs are most likely nitrogen vacancies (VN) and/or VN-related point defects intensively distributed within ∼100 nm from the n-type GaN surface after a high-temperature growth. We investigate the effect of SDs on the internal quantum efficiency (IQE) of green light-emitting diodes (LEDs) by preparing GaInN-based green LEDs employing a surface-etched n-type GaN, which exhibits a prominent enhancement of the PL efficiency with an increase in the etching depth. This effect is attributable to the reduced non-radiative recombination centers in multiple-quantum-well active regions because the SDs near the n-type GaN surface are removed by etching. We discuss strategies of in situ engineering on SDs to further improve the IQE in GaInN-based green LEDs on the basis of the results presented in this study.
- Subjects :
- 010302 applied physics
Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
business.industry
02 engineering and technology
Green-light
021001 nanoscience & nanotechnology
01 natural sciences
Crystallographic defect
law.invention
Etching (microfabrication)
law
0103 physical sciences
Optoelectronics
Quantum efficiency
0210 nano-technology
business
Diode
Non-radiative recombination
Light-emitting diode
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 118
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........4df3396e1bdb6475a1a5dde42212a2e3