Compensation centers in ZnSeTe

Extended x-ray absorption fine structure (EXAFS), Rutherford-backscattering ion channeling, and particle induced x-ray emission channeling (PIXE/C) measurements have been performed in order to investigate compensation centers in Cl doped ZnSeTe. The EXAFS results from Cl doped ZnSeTe suggest that almost all Cl atoms are incorporated into substitutional Se lattice sites, which seems to indicate that Cl atoms themselves are not responsible for the compensation centers. The PIXE/C angular profiles were measured across the 〈100〉, 〈110〉, and 〈111〉 axes for undoped ZnSeTe. Comparing the angular profiles for Zn Kα, Se Kα, and Te Lα x-ray yields, it was found that some portion of the Te atoms (∼1020 cm−3) are located at tetrahedral interstitial sites. From these results, the difficulty of realizing n-type ZnSeTe is considered to be due to the existence of the interstitial Te atoms which act as acceptors.