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Fabrication of Ga2O3/Si direct bonding interface for high power device applications
- Source :
- 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
- Publication Year :
- 2021
- Publisher :
- IEEE, 2021.
-
Abstract
- The fabrication of Ga 2 O 3 (010)/Si(100) and Ga 2 O 3 (001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga 2 O 3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).
Details
- Database :
- OpenAIRE
- Journal :
- 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
- Accession number :
- edsair.doi...........4e73994cd4adf7cdd7965388c20cff71
- Full Text :
- https://doi.org/10.1109/ltb-3d53950.2021.9598435