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Fabrication of Ga2O3/Si direct bonding interface for high power device applications

Authors :
Yutaka Ohno
Masataka Higashiwaki
Jianbo Liang
Daiki Takatsuki
Yasuo Shimizu
Naoteru Shigekawa
Yasuyoshi Nagai
Source :
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Publication Year :
2021
Publisher :
IEEE, 2021.

Abstract

The fabrication of Ga 2 O 3 (010)/Si(100) and Ga 2 O 3 (001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga 2 O 3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).

Details

Database :
OpenAIRE
Journal :
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
Accession number :
edsair.doi...........4e73994cd4adf7cdd7965388c20cff71
Full Text :
https://doi.org/10.1109/ltb-3d53950.2021.9598435