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Shape variation in epitaxial microstructures of gold silicide grown on Br-passivated Si(111) surfaces
- Source :
- Surface Science. 549:149-156
- Publication Year :
- 2004
- Publisher :
- Elsevier BV, 2004.
-
Abstract
- Kinetic Monte Carlo simulations for growth on substrates of three-fold symmetry predict the growth of islands of various shapes depending on the growth temperature [Phys. Rev. Lett. 71 (1993) 2967]. On Br–Si(1 1 1) substrates growth of epitaxial gold silicide islands of equilateral triangular and trapezoidal shapes have earlier been observed by annealing at the Au–Si eutectic temperature,363 � C [Phys. Rev. B 51 (1995) 14330]. We carried out annealing with temperature variation within a small window––(363 ± 30) � C. This has led to island growth of additional shapes like regular hexagon,elongated hexagon,walled hexagon and dendrite. Some of the observed island shapes have not been predicted.
- Subjects :
- Silicon
Condensed matter physics
Annealing (metallurgy)
chemistry.chemical_element
Surfaces and Interfaces
Island growth
Condensed Matter Physics
Epitaxy
Surfaces, Coatings and Films
Faceting
chemistry.chemical_compound
Crystallography
chemistry
Silicide
Materials Chemistry
Kinetic Monte Carlo
Eutectic system
Subjects
Details
- ISSN :
- 00396028
- Volume :
- 549
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi...........4e96f0a7ee69737c5ce8848198829dc9