Investigation of CuIn1−xGaxSe2 thin films prepared by chemical solution-based processes for CIGS solar cells

In this study, CuIn1−xGaxSe2 (x = 0∼0.5) thin films were synthesized by using a multi-layer spray (MLS) process with Se powder and then CdS buffer layer deposited by CBD deposition process. The as-deposited CIGS thin films were selenized during the rapid thermal process (RTP) in order to improve the crystallization of films and to avoid their oxidation. The obtained samples were systematically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron (XPS) and UV-vis spectroscopy. The physicochemical properties of the prepared films were good enough to be used in CIGS solar cell devices on the basis of analytical results.