Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top Electrodes

Authors :: Haider Abbas
Chi Jung Kang
Nam Joo Lee
Tae Sung Lee
Hyun Ho Lee
Tae-Sik Yoon
Source :: ACS Applied Electronic Materials. 2:1154-1161
Publication Year :: 2020
Publisher :: American Chemical Society (ACS), 2020.
Abstract: Memristive switching with digital set and multistep analog reset characteristics were demonstrated in tantalum oxide (Ta2O5)-based resistive random access memory (RRAM) devices using Ti and Ag top ...

Subjects :: Materials science
business.industry
Memristor
Electronic, Optical and Magnetic Materials
Resistive random-access memory
law.invention
Protein filament
law
Electrode
Materials Chemistry
Electrochemistry
Optoelectronics
Tantalum oxide
Current (fluid)
business
Reset (computing)

Full Text Access

Tools