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A new in-situ surface treatment during MBE-grown PbSe on CaF2/Si(111) heterostructure
- Source :
- Journal of Crystal Growth. 311:3395-3398
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- The continual improvement of IV–VI materials grown by molecular beam epitaxy (MBE) is a key step in the development of IV–VI infrared semiconductor devices on silicon substrates. This study presents a novel surface-treatment method which is carried out during MBE growth of monocrystalline PbSe on Si(1 1 1)-oriented substrates. Details of the experimental procedures are described and supported by reflection high-energy electron diffraction (RHEED) patterns. The effect of the in-situ surface-treatment method is exhibited in the forms of improved electrical and morphological properties of PbSe thin films. Specially, the carrier mobility increases almost three-fold at 77 K and nearly two-fold at 300 K. The density of the growth pits undergoes almost three-fold reduction, whereas the density of the threading dislocations decreases around four-fold.
- Subjects :
- Electron mobility
Materials science
Reflection high-energy electron diffraction
Silicon
business.industry
chemistry.chemical_element
Heterojunction
Condensed Matter Physics
Inorganic Chemistry
Monocrystalline silicon
Optics
chemistry
Electron diffraction
Materials Chemistry
Optoelectronics
Thin film
business
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 311
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........4f690d72017d1c416132edef8af170af