Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility

We hereby present a non-destructive method for extracting the activation level on boron-doped germanium-on-insulator (GeOI) wafers, with a discussion on the impact of the hole mobility model. This method combines Monte Carlo boron profile simulations with optical Ge layer thickness TGe and electrical sheet resistance Rsh measurements. As B atoms are known not to diffuse in Ge for the usual activation temperatures (