Efficiency and stability enhancement of perovskite solar cells by introducing CsPbI3 quantum dots as an interface engineering layer

Although great efforts have been devoted to enhancing the efficiency and stability of perovskite solar cells (PSCs), the performance of PSCs has been far lower than anticipated. Interface engineering is helpful for obtaining high efficiency and stability through control of the interfacial charge transfer in PSCs. This paper demonstrates that the efficiency and stability of PSCs can be enhanced by introducing stable α-CsPbI3 quantum dots (QDs) as an interface layer between the perovskite film and the hole transport material (HTM) layer. By synergistically controlling the valence band position (VBP) of the perovskite and the interface layer, an interface engineering strategy was successfully used to increase the efficiency of hole transfer from the perovskite to the HTM layer, resulting in the power conversion efficiency increasing from 15.17 to 18.56%. In addition, the enhancement of the stability of PSCs can be attributed to coating inorganic CsPbI3 QDs onto the perovskite layer, which have a high moisture stability and result in long-term stability of the PSCs in ambient air.