Injected semiconductor laser

The response of a single mode semiconductor laser to an injected external signal has been studied. The control parameters are the power and the frequency of the injected signal together with the gain of the laser. The injected power varies from 6 down to -120 dBm. Following the magnitude of these control parameters many phenomena can be observed. When both injected field and laser eigenfield are of the same order of magnitude they compete in a non-linear way, leading to frequency generation, push-pull effects, hysteresis phenomena and chaos. For weak dBm the laser behaves with the injected field in the same way as it does for the spontaneous emission which is its natural source. We describe the role of the injected laser as a filter and an amplifier in this case. It follows that the laser can be used to process information in ways that are not yet completely exploited.