THz Spectroscopy of the Anisotropic Refractive Index of β-Ga2O3

We investigated the monoclinic β-Ga 2 O 3 ultrawide-bandgap semiconductor using transmission terahertz time-domain spectroscopy (THz-TDS). To characterize the anisotropic properties, the complex refractive index of a semi-insulating bulk and of an n-type Si-doped homoepitaxial film were obtained along the [100] and [010] directions. The material response can be well-described by the Drude-Lorentz model, from which the static permittivity and the electrical properties were determined in good agreement with electrical contact measurements.