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Screen Printable Boron Doping Paste and Its Process for n-Type PERT Solar Cells
- Source :
- IEEE Journal of Photovoltaics. 8:483-486
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- We have developed new boron paste materials for the process of diffusing crystalline silicon solar cells. The boron paste promotes pattern-forming, long carrier lifetime, and allows good sheet resistance uniformity. The cell efficiency achieved when applying boron paste to an n-type PERT cell was practically excellent. A high efficiency was also obtained under a codiffusion process with POCl3 gas for a simplifying process. We reported on the diffusion characteristic and process details of the boron paste in this paper.
- Subjects :
- 010302 applied physics
Materials science
Silicon
Diffusion
Doping
chemistry.chemical_element
02 engineering and technology
Carrier lifetime
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
Chemical engineering
chemistry
Scientific method
0103 physical sciences
Crystalline silicon
Electrical and Electronic Engineering
0210 nano-technology
Boron
Sheet resistance
Subjects
Details
- ISSN :
- 21563403 and 21563381
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Photovoltaics
- Accession number :
- edsair.doi...........507e29e0d04bdcd0228c7cad1160bc85
- Full Text :
- https://doi.org/10.1109/jphotov.2018.2797973