Back to Search Start Over

Successful enhancement of metal segregation at NiSi/Si junction through pre-amorphization technique

Authors :
Atsuhiro Kinoshita
Yoshinori Tsuchiya
Yoshifumi Nishi
Junji Koga
Akira Hokazono
Source :
2008 Symposium on VLSI Technology.
Publication Year :
2008
Publisher :
IEEE, 2008.

Abstract

A new technique to enhance the metal segregation at NiSi/Si interface for reducing contact resistance in source/drain electrodes is proposed. It is demonstrated that metal segregation at the junction of pre-amorphized NiSi/Si using ion-implantation leads to reduction of Schottky barrier height by > 0.2 eV. This modulation width is far beyond the previous metal segregation technique [1] and allows 90% reduction of contact resistance in source/drain junctions.

Details

Database :
OpenAIRE
Journal :
2008 Symposium on VLSI Technology
Accession number :
edsair.doi...........50a34d0dae573641d32b78239950ecda
Full Text :
https://doi.org/10.1109/vlsit.2008.4588615