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Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer
- Source :
- Japanese Journal of Applied Physics. 58:081007
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
-
Abstract
- 4H-SiC n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with a Ba-silicate interface layer were irradiated with gamma-rays up to 850 kGy at room temperature. Above 600 kGy, the field effect mobility increased from 12 to 18 cm2 V−1 s−1. The narrower channel in the NMOSFETs enhanced radiation responses, such as mobility enhancement and threshold voltage shift. These results indicate that the edge of the channel significantly modifies the electrical characteristics.
- Subjects :
- 010302 applied physics
Interface layer
Materials science
Physics and Astronomy (miscellaneous)
business.industry
General Engineering
General Physics and Astronomy
Field effect
Radiation
01 natural sciences
Silicate
Threshold voltage
Metal
chemistry.chemical_compound
chemistry
visual_art
0103 physical sciences
visual_art.visual_art_medium
Optoelectronics
Field-effect transistor
Irradiation
business
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........5157adb586057b2a539fcc459c1970d9
- Full Text :
- https://doi.org/10.7567/1347-4065/ab2dab