Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

Authors :: Jolien Dendooven
Christophe Detavernier
Matthias Minjauw
Boris Capon
Marc Schaekers
Source :: Journal of Materials Chemistry C. 3:4848-4851
Publication Year :: 2015
Publisher :: Royal Society of Chemistry (RSC), 2015.
Abstract: A plasma enhanced ALD process for Ru using RuO4 and H2-plasma is reported at sample temperatures ranging from 50 °C to 100 °C. At 50 °C, low impurity content Ru thin films were grown with a saturated growth rate of 0.11 nm per cycle. A study of the influence of various process parameters on the Ru film properties is given.

Subjects :: Materials science
Inorganic chemistry
chemistry.chemical_element
General Chemistry
Plasma
Chemical vapor deposition
Oxygen
Ruthenium
Atomic layer deposition
chemistry
Impurity
Materials Chemistry
Growth rate
Thin film

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