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Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

Authors :
Jingchen Cao
Peng Fei Wang
Xun Li
Zixiang Guo
En Xia Zhang
Robert A. Reed
Michael L. Alles
Ronald D. Schrimpf
Daniel M. Fleetwood
Antonio Arreghini
Maarten Rosmeulen
Joao P. Bastos
Geert Van den Bosch
Dimitri Linten
Source :
IEEE Transactions on Nuclear Science. 69:314-320
Publication Year :
2022
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2022.

Subjects

Subjects :
Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Details

ISSN :
15581578 and 00189499
Volume :
69
Database :
OpenAIRE
Journal :
IEEE Transactions on Nuclear Science
Accession number :
edsair.doi...........51c691ae15c88ebbeec87a79c6135d81

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