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Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells
- Source :
- physica status solidi (a). 203:149-153
- Publication Year :
- 2006
- Publisher :
- Wiley, 2006.
-
Abstract
- We report results from detailed optical spectroscopy from MOCVD grown GaN/Al 0.07 Ga 0.93 N multiple quantum wells (MQWs). Effects of Si doping position on the emission energy and recombination dynamics were studied by means of photoluminescence (PL) and time-resolved PL measurements. The samples were Si doped with the same level but different position of the dopant layer. Only the sample doped in the well shows the MQW emission redshifted compare to the GaN bandgap. The redshift is attributed to the self-energy shift of the electron states due to the correlated motion of the electrons exposed to the fluctuating potential of the donor ions. At low temperature the PL decay time of the sample doped in the well by a factor of two is longer than for the barrier doped case. The difference is explained by the effect of interplay of free carriers and ions on the screening of the polarization field in these doped structures.
- Subjects :
- Photoluminescence
Dopant
Chemistry
Band gap
Doping
Analytical chemistry
Surfaces and Interfaces
Electron
Condensed Matter Physics
Molecular physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Ion
Condensed Matter::Materials Science
Condensed Matter::Superconductivity
Materials Chemistry
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
Spectroscopy
Subjects
Details
- ISSN :
- 18626319 and 18626300
- Volume :
- 203
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........51ca3b89dee3ae1c64f9f1fd5a8a852f