Charge trapping in SiO2/HfO2/TiN gate stack

MLA

Gerard Ghibaudo, et al. “Charge Trapping in SiO2/HfO2/TiN Gate Stack.” Microelectronics Reliability, vol. 43, Sept. 2003, pp. 1445–48. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........51d05c386b1ae4ee7a08b0ebb3222768&authtype=sso&custid=ns315887.

APA

Gerard Ghibaudo, Francois Lime, & Bernard Guillaumot. (2003). Charge trapping in SiO2/HfO2/TiN gate stack. Microelectronics Reliability, 43, 1445–1448.

Chicago

Gerard Ghibaudo, Francois Lime, and Bernard Guillaumot. 2003. “Charge Trapping in SiO2/HfO2/TiN Gate Stack.” Microelectronics Reliability 43 (September): 1445–48. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........51d05c386b1ae4ee7a08b0ebb3222768&authtype=sso&custid=ns315887.