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Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme

Authors :
Inge Vaesen
Thomas Witters
Kristof Kellens
Anabela Veloso
Raja Athimulam
Aaron Thean
E. Vecchio
Farid Sebaai
Lars-Ake Ragnarsson
Hugo Bender
X. Shi
Katia Devriendt
A. Dangol
Vasile Paraschiv
Tom Schram
Thomas Chiarella
Stephan Brus
Harold Dekkers
Thierry Conard
Eddy Simoen
Moon Ju Cho
Annemie Van Ammel
Guillaume Boccardi
Soon Aik Chew
Olivier Richard
Nancy Heylen
Naoto Horiguchi
Jae Woo Lee
Higuchi Yuichi
Hiroaki Arimura
Philippe Roussel
Source :
Japanese Journal of Applied Physics. 53:04EA04
Publication Year :
2014
Publisher :
IOP Publishing, 2014.

Abstract

We report on aggressively scaled replacement metal gate, high-k last (RMG-HKL) planar and multi-gate fin field-effect transistor (FinFET) devices, systematically investigating the impact of post high-k deposition thermal (PDA) and plasma (SF6) treatments on device characteristics, and providing a deeper insight into underlying degradation mechanisms. We demonstrate that: 1) substantially reduced gate leakage (J G) and noise can be obtained for both type of devices with PDA and F incorporation in the gate stack by SF6, without equivalent oxide thickness (EOT) penalty; 2) SF6 enables improved mobility and reduced interface trapped charge density (N it) down to narrower fin devices [fin width (W Fin) ≥ 5 nm], mitigating the impact of fin patterning and fin sidewall crystal orientations, while allowing a simplified dual-effective work function (EWF) CMOS scheme suitable for both device architectures; 3) PDA yields smaller, in absolute values, PMOS threshold voltage |V T|, and substantially improved reliability behavior due to reduction of bulk defects.

Details

ISSN :
13474065 and 00214922
Volume :
53
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........5334a012afd35dfbc08d61bef3db803e
Full Text :
https://doi.org/10.7567/jjap.53.04ea04