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Enhancement-Mode $\beta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
- Source :
- IEEE Electron Device Letters. 41:296-299
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- Enhancement-mode (E-mode) vertical $\beta $ -Ga2O3 metal–oxide–semiconductor (MOS) field-effect transistors featuring a current aperture were developed on a single-crystal $\beta $ -Ga2O3 (001) substrate. Nitrogen ions were implanted into a drift layer grown by halide vapor phase epitaxy to form current blocking layers (CBLs) for vertical source–drain isolation, while Si ions were implanted to form degenerately doped source contact regions and a top-gated lateral channel that was fully depleted at 0-V gate bias. The devices delivered a high output current on/off ratio of $2\times {10}^{{7}}$ despite a nonideal MOS interface that limited the maximum drain current density to
- Subjects :
- 010302 applied physics
Materials science
business.industry
Transistor
Doping
Epitaxy
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Ion
Ion implantation
law
Power electronics
0103 physical sciences
Optoelectronics
Electrical and Electronic Engineering
business
Leakage (electronics)
Voltage
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........53796c004e754dc3ac44cbfa98a4ffe4