Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

MLA

James C. Gallagher, et al. “Effect of High Temperature, High Pressure Annealing on GaN Drift Layers for Vertical Power Devices.” Journal of Crystal Growth, vol. 499, Oct. 2018, pp. 35–39. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2018.07.027.

APA

James C. Gallagher, Andrew D. Koehler, Lunet E. Luna, Jinqiao Xie, Boris N. Feigelson, Travis J. Anderson, Alan G. Jacobs, & Karl D. Hobart. (2018). Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices. Journal of Crystal Growth, 499, 35–39. https://doi.org/10.1016/j.jcrysgro.2018.07.027

Chicago

James C. Gallagher, Andrew D. Koehler, Lunet E. Luna, Jinqiao Xie, Boris N. Feigelson, Travis J. Anderson, Alan G. Jacobs, and Karl D. Hobart. 2018. “Effect of High Temperature, High Pressure Annealing on GaN Drift Layers for Vertical Power Devices.” Journal of Crystal Growth 499 (October): 35–39. doi:10.1016/j.jcrysgro.2018.07.027.