Computationally efficient analytical surface potential model for UTBB FD-SOI transistors

In this paper, we present a novel physics based model for front and back gate coupling in UTBB (Ultra Thin body with Buried oxide) Fully Depleted Silicon On Insulator (FD-SOI) Transistors, which is then used in deriving the front and back gate surface potentials. To the best of our knowledge this is the first time a physical coupling model is being presented. The methodology discussed in this work is valid for any transistor irrespective of the geometry. The model shows accurate match with the exact numerical solution.