Lasing of the III/V compound semiconductor Ga(NAsP) integrated lattice-matched to Si substrate

Authors :: Wolfgang Stolz
R. Fritz
Kerstin Volz
W. W. Rühle
Nektarios Koukourakis
S. Zinnkann
N. S. Köster
M. Zimprich
Nils C. Gerhardt
Christoph Lange
Martin R. Hofmann
Sangam Chatterjee
S. Liebich
Bernardette Kunert
Source :: 2009 6th IEEE International Conference on Group IV Photonics.
Publication Year :: 2009
Publisher :: IEEE, 2009.
Abstract: Ga(NAsP) multi quantum well heterostructures were grown pseudomorphically on exactly oriented (001) Silicon substrates without the formation of misfit dislocations. Optical pumped lasing operation was observed at temperatures up to 125 K.

Subjects :: Materials science
Silicon
business.industry
Physics::Optics
chemistry.chemical_element
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
Optical pumping
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
NASP
Lattice (order)
Optoelectronics
business
Lasing threshold
Quantum well

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