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InAlGaN-based ridge-guide laser diodes using remote plasma chemical vapour deposition for enhanced performance

Authors :
Satya Barik
Qian Gao
Bin Zhang
Oliver Pitman
P.P.-T. Chen
Ian Mann
Josh D. Brown
Alanna Fernandes
Marie Wintrebert-Fouquet
Brad Zadrozny
Brad Siskavich
Source :
Novel In-Plane Semiconductor Lasers XX.
Publication Year :
2021
Publisher :
SPIE, 2021.

Abstract

InAlGaN-based laser diodes (LDs) can be designed to emit across a wide range of wavelengths spanning UV to green. A common challenge across all wavelengths lies in the difficulty in producing low resistance p-type InAlGaN layers. For shorter wavelength devices, the requirement of high aluminium containing p-AlGaN leads to high device series resistance. For the longer wavelength devices approaching the green wavelengths, the thermal degradation of the indium-rich quantum wells during the growth of the p-GaN and p-AlGaN cladding layers reduces the device efficiency. In this paper we discuss how BluGlass’s remote plasma chemical vapour deposition (RPCVD) technology can address these challenges through improvements to intrinsic material properties as well as enabling novel design architectures.

Details

Database :
OpenAIRE
Journal :
Novel In-Plane Semiconductor Lasers XX
Accession number :
edsair.doi...........5568ac78a223e741746847438f7304fc
Full Text :
https://doi.org/10.1117/12.2584047