In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)

A monitoring technique for molecular beam epitaxial growth of InAs∕GaAs(001) nanoislands is presented. With the help of synchrotron radiation, x-ray diffraction intensity mapping in reciprocal space has been measured during growth. The internal strain distribution and height of the Stranski-Krastanov islands were monitored at a temporal resolution of 9.6s. The relaxation process of internal strain inside the Stranski-Krastanov islands displayed significant dependence on the growth temperature.