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The hole diffusion length in epitaxial zinc selenide

Authors :
Jiazhen Zheng
J.W. Allen
Source :
Journal of Crystal Growth. 138:477-480
Publication Year :
1994
Publisher :
Elsevier BV, 1994.

Abstract

Hole diffusion lengths were determined for two epitaxial n-type ZnSe layers by fitting the measured photoluminescence spectra to a theoretical expression which contains the measured absorption constants. The room temperature hole diffusion lengths are found to be 0.1 and 0.06 μm for ZnSe with electron concentrations of 1.6 × 1017 and 9.0 × 1017 cm-13, respectively. These short diffusion lengths are attributed to a strong Hall-Shockley-Read recombination.

Details

ISSN :
00220248
Volume :
138
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........55c77b4f7472eb771e24527f6e2b335e
Full Text :
https://doi.org/10.1016/0022-0248(94)90853-2