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Stable Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Film for Flexible Nonvolatile Memory Application

Authors :
Woo Young Kim
Hee Chul Lee
Source :
IEEE Electron Device Letters. 33:260-262
Publication Year :
2012
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2012.

Abstract

In this letter, a formation method for uniform ferroelectric polymer thin film on very rough aluminum foil is introduced, and the performance characteristics of the film are characterized by hysteresis measurements. For a bending radius of 0.6 cm, the remanent polarization, coercive field and internal bias field are equal in a flat state. After bending 500 times repetitively with a bending radius of 1.1 cm, its performance was nearly constant. Therefore, the method proposed in this letter can be useful for the fabrication of high-quality flexible memory devices on a flexible and rough substrate.

Details

ISSN :
15580563 and 07413106
Volume :
33
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........56e9b1a2e19d4eeb4e04533234997381