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Atom probe tomography study on Ge1−x−ySnxCy hetero-epitaxial film on Ge substrates
- Source :
- Thin Solid Films. 592:54-58
- Publication Year :
- 2015
- Publisher :
- Elsevier BV, 2015.
-
Abstract
- We analyzed the incorporation of C atoms into a ternary alloy Ge 1 − x − y Sn x C y epitaxial film on Ge substrates on a sub-nanometer scale by using atom probe tomography. Periodic atom distributions from individual (111) atomic planes were observed both in the Ge 1 − x − y Sn x C y film and at the Ge substrates. Sn/C atoms had non-uniform distributions in the film. They also demonstrated a clear positive correlation in their distributions. Substitutional C atoms were only incorporated into the film when an Sn atom beam was applied onto the substrates under film growth conditions.
- Subjects :
- Condensed Matter::Quantum Gases
Materials science
Binding energy
Metals and Alloys
Surfaces and Interfaces
Atom probe
Sputter deposition
Positive correlation
Epitaxy
Ternary alloy
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Crystallography
law
Condensed Matter::Superconductivity
Atom
Physics::Atomic and Molecular Clusters
Materials Chemistry
Physics::Atomic Physics
Beam (structure)
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 592
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........570fc8bcc419d01b7a518d6b645dac3e
- Full Text :
- https://doi.org/10.1016/j.tsf.2015.09.002