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Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
- Source :
- IEEE Electron Device Letters. 26:676-678
- Publication Year :
- 2005
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2005.
-
Abstract
- Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in k/sub B/T layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms of ballistic efficiency and injection velocity.
- Subjects :
- Materials science
Backscatter
Condensed matter physics
Scattering
Mean free path
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Nanoelectronics
Modulation
Ballistic conduction
MOSFET
Ultimate tensile strength
Electronic engineering
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 07413106
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........5748492d729ceee39b72047e56c68432