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The formation of a plasma sheath near a plane absorbing conductor
- Source :
- International Journal of Electronics. 36:551-557
- Publication Year :
- 1974
- Publisher :
- Informa UK Limited, 1974.
-
Abstract
- In this paper we consider a model describing the formation of a plasma sheath in the neighbourhood of a plane absorbing conducting wall. Expressions are derived for the electric potential in the plasma and for the ion and electron densities. The validity of the model is restricted to cases in which the wall potential is monotonic in time
Details
- ISSN :
- 13623060 and 00207217
- Volume :
- 36
- Database :
- OpenAIRE
- Journal :
- International Journal of Electronics
- Accession number :
- edsair.doi...........579431a2267a1e4fba56103eec44001b