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The formation of a plasma sheath near a plane absorbing conductor

Authors :
N. Anderson
Source :
International Journal of Electronics. 36:551-557
Publication Year :
1974
Publisher :
Informa UK Limited, 1974.

Abstract

In this paper we consider a model describing the formation of a plasma sheath in the neighbourhood of a plane absorbing conducting wall. Expressions are derived for the electric potential in the plasma and for the ion and electron densities. The validity of the model is restricted to cases in which the wall potential is monotonic in time

Details

ISSN :
13623060 and 00207217
Volume :
36
Database :
OpenAIRE
Journal :
International Journal of Electronics
Accession number :
edsair.doi...........579431a2267a1e4fba56103eec44001b