Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures

The structural, optical, morphological and electrical properties of the low energy N ion implanted InGaN/GaN heterostructures have been investigated. These heterostructures were grown by Metal-Organic Chemical Vapor Deposition (MOCVD). The compositional fluctuations and crystalline quality of pristine and implanted samples are measured by the High-Resolution X-ray diffraction. The tricking asymmetric (10-15) GaN and InGaN peaks of ω-2θ and omega diffraction patterns are then resolved using Reciprocal Space Mapping. The morphology of N ion implanted InGaN sample shows a decrease in density of the V-pits and hillocks with increasing N ion fluences. The atomic percentage of In, Ga and N are estimated using X-ray Photoelectron Spectroscopy. The Raman studies showed the E2 high and A1 (LO) modes of GaN and InGaN for pristine and implanted samples which also confirm that the linear dependence of In composition with the N ion implantation fluences. The photoluminence results confirm the suppression of yellow luminescence peak after implantation. The Hall measurements confirm the enhancement in electron mobility after implantation which inevitably suppressed the carrier concentration with decreased nitrogen vacancies. The low energy N ion implantation increases In composition and reduction of In clusters in the InGaN layer which have a technological significance in InGaN based optoelectronic applications.