Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

MLA

Dan Mo, et al. “Angular Dependence of Multiple-Bit Upset Response in Static Random Access Memories under Heavy Ion Irradiation.” Chinese Physics B, vol. 22, Aug. 2013, p. 086102. EBSCOhost, https://doi.org/10.1088/1674-1056/22/8/086102.

APA

Dan Mo, Jinglai Duan, Zhang Zhangang, Kai Xi, Jie Luo, Song Gu, Hong Su, Chao Geng, Youmei Sun, Huijun Yao, Jie Liu, & Mingdong Hou. (2013). Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation. Chinese Physics B, 22, 086102. https://doi.org/10.1088/1674-1056/22/8/086102

Chicago

Dan Mo, Jinglai Duan, Zhang Zhangang, Kai Xi, Jie Luo, Song Gu, Hong Su, et al. 2013. “Angular Dependence of Multiple-Bit Upset Response in Static Random Access Memories under Heavy Ion Irradiation.” Chinese Physics B 22 (August): 086102. doi:10.1088/1674-1056/22/8/086102.