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Physical degradation of GaN HEMT devices under high drain bias reliability testing
- Source :
- Microelectronics Reliability. 49:478-483
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC substrates. Standard III–V commercial production processing technology was used to fabricate the devices, which were then subjected to stress under accelerated DC life-tests with base-plate temperatures of 82, 112, and 142 C. Drain bias of 40 V and time-zero drain current of 250 mA/mm were applied. TEM samples were prepared via the lift-out technique using a focused ion beam (FIB). TEM analysis revealed that electrically degraded devices always contain a pit-like defect next to the drain in the top AlGaN layer. It has been found that the degree of the defect formation strongly correlates to drain current (IDmax) degradation.
- Subjects :
- Materials science
business.industry
Electrical engineering
Heterojunction
High-electron-mobility transistor
Condensed Matter Physics
Epitaxy
Accelerated aging
Focused ion beam
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Stress (mechanics)
Reliability (semiconductor)
Optoelectronics
Metalorganic vapour phase epitaxy
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........586c0a13776250f949b8923bb034c1a5