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Light emission of C60 embedded in porous silicon
- Source :
- Applied Physics Letters. 67:783-785
- Publication Year :
- 1995
- Publisher :
- AIP Publishing, 1995.
-
Abstract
- We have fabricated samples with C60 implanted into porous silicon with the ionized cluster beam deposition approach for improving the light emission of C60. We have obtained intense and well‐resolved photoluminescence spectra under excitation of Ar+ laser (514.5 nm) at room temperature. The depth analysis of secondary ion mass spectroscopy showed that C60 had been incorporated into porous silicon. A large number of fine‐structure peaks in the photoluminescence spectrum indicated the strong coupling of vibrational progressions with electronic states of C60 induced by the interaction between C60 molecule and nanometer‐sized silicon particles.
- Subjects :
- Photoluminescence
Materials science
Physics and Astronomy (miscellaneous)
Silicon
Analytical chemistry
chemistry.chemical_element
Laser
Porous silicon
Molecular physics
law.invention
Condensed Matter::Materials Science
Ion implantation
chemistry
law
Ionization
Physics::Atomic and Molecular Clusters
Light emission
Porous medium
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 67
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........589fdf00aa7ae3ecf11ecdd13d7554e3