Perspectives of racetrack memory based on current-induced domain wall motion: From device to system

Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory is an attractive concept based on this phenomenon, which can store and transfer a series of data along a magnetic nanowire. Although the first prototype has been successfully fabricated, its advancement is relatively arduous caused by certain technique and material limitations. Particularly, the storage capacity issue is one of the most serious bottlenecks hindering its application for practical systems. In this paper, we present two alternative solutions to improve the capacity of racetrack memory: magnetic field assistance and chiral domain wall (DW) motion. The former one can lower the current density for DW shifting; the latter one can utilize materials with low resistivity. Both of them are able to increase the nanowire length and allow higher feasibility of large-capacity racetrack memory. Furthermore, system level simulation shows that a racetrack memory based cache can improve system performance by about 15.8% and significantly reduces the energy consumption, compared to the SRAM counterpart.