Investigation of power and linearity performance for low- and high-voltage SiGe HBTs

Authors :: Tony Vanhoucke
E. Gridelet
T. V. Dinh
Ralf Pijper
D. B. M. Klaassen
Source :: 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Publication Year :: 2013
Publisher :: IEEE, 2013.
Abstract: Linearity and power performance in both small-and large-signal region of low- and high-voltage SiGe HBTs has been investigated by on-wafer measurements and process/device simulator. The impact of Kirk effect and avalanche on power and linearity has been experimentally captured and analyzed, which indicates the limitation of each type of device for RF power amplifier applications.

Subjects :: Materials science
Avalanche diode
Kirk effect
Physics::Instrumentation and Detectors
business.industry
RF power amplifier
Electrical engineering
Linearity
Power performance
High voltage
Avalanche breakdown
Power (physics)
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
business

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