Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions

In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.