Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

MLA

Jérôme Biscarrat, et al. “Investigation on Interface Charges in SiN/AlxGa1−xN/GaN Heterostructures by Analyzing the Gate-to-Channel Capacitance and the Drain Current Behaviors.” Journal of Applied Physics, vol. 130, Sept. 2021, p. 105704. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........594382ea06c0a6da0805eae17cea2567&authtype=sso&custid=ns315887.

APA

Jérôme Biscarrat, François Triozon, Bledion Rrustemi, Charles Leroux, William Vandendaele, Marie-Anne Jaud, Cyrille Le Royer, Gerard Ghibaudo, & Clémentine Piotrowicz. (2021). Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors. Journal of Applied Physics, 130, 105704.

Chicago

Jérôme Biscarrat, François Triozon, Bledion Rrustemi, Charles Leroux, William Vandendaele, Marie-Anne Jaud, Cyrille Le Royer, Gerard Ghibaudo, and Clémentine Piotrowicz. 2021. “Investigation on Interface Charges in SiN/AlxGa1−xN/GaN Heterostructures by Analyzing the Gate-to-Channel Capacitance and the Drain Current Behaviors.” Journal of Applied Physics 130 (September): 105704. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........594382ea06c0a6da0805eae17cea2567&authtype=sso&custid=ns315887.