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Rapid Bimolecular and Defect-Assisted Carrier Recombination in Hexagonal Boron Nitride
- Source :
- The Journal of Physical Chemistry C. 123:14689-14695
- Publication Year :
- 2019
- Publisher :
- American Chemical Society (ACS), 2019.
-
Abstract
- Hexagonal boron nitride (hBN) is a wide, indirect bandgap semiconductor that holds great promise for optoelectronic devices in the ultraviolet and mid-infrared spectral regimes. The efficiency of o...
- Subjects :
- Materials science
Band gap
Physics::Optics
Hexagonal boron nitride
Astrophysics::Cosmology and Extragalactic Astrophysics
02 engineering and technology
010402 general chemistry
medicine.disease_cause
01 natural sciences
Condensed Matter::Materials Science
medicine
Physical and Theoretical Chemistry
Nonlinear Sciences::Pattern Formation and Solitons
Astrophysics::Galaxy Astrophysics
business.industry
021001 nanoscience & nanotechnology
0104 chemical sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
General Energy
Semiconductor
Optoelectronics
0210 nano-technology
business
Recombination
Ultraviolet
Subjects
Details
- ISSN :
- 19327455 and 19327447
- Volume :
- 123
- Database :
- OpenAIRE
- Journal :
- The Journal of Physical Chemistry C
- Accession number :
- edsair.doi...........5a7e7ee31929b4a01ca2cb7370b62e8c