Surface and near‐surface atomic structure of GaAs (110)

Low‐energy electron diffraction (LEED) intensity–voltage data for a complete set of first‐order diffraction beams of the GaAs (110) surface is averaged at constant momentum transfer and compared with kinematical and dynamical model calculations for several surface atomic geometries. The atomic displacements in the surface and first two subsurface layers are obtained via this analysis. The influence of multiple scattering is examined by computing the single and multiple scattering contributions to the intensity–voltage profiles associated with atomic distortions within the first three lattice layers. This procedure allows the identification of the major features of the structure in the LEED–CMTA (constant momentum transfer average) profiles either with multiple scattering effects or with single scattering resonances derived from the lattice geometry.