Back to Search
Start Over
Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors
- Source :
- 2011 International Electron Devices Meeting.
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage.
- Subjects :
- Materials science
Condensed matter physics
business.industry
Electrical engineering
Time-dependent gate oxide breakdown
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Thermal conduction
Power law
Variable-range hopping
Computer Science::Hardware Architecture
Computer Science::Emerging Technologies
Gate oxide
Thin-film transistor
Percolation
business
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2011 International Electron Devices Meeting
- Accession number :
- edsair.doi...........5aa2ad35ebf41132c89576e646d86991