High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

MLA

Aaron R. Arehart, et al. “High Electron Density β-(Al0.17Ga0.83)2O3/Ga2O3 Modulation Doping Using an Ultra-Thin (1 Nm) Spacer Layer.” Journal of Applied Physics, vol. 127, June 2020, p. 215706. EBSCOhost, https://doi.org/10.1063/5.0005531.

APA

Aaron R. Arehart, Zhanbo Xia, Siddharth Rajan, Steven A. Ringel, Wyatt Moore, Joe McGlone, Yumo Liu, & Nidhin Kurian Kalarickal. (2020). High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer. Journal of Applied Physics, 127, 215706. https://doi.org/10.1063/5.0005531

Chicago

Aaron R. Arehart, Zhanbo Xia, Siddharth Rajan, Steven A. Ringel, Wyatt Moore, Joe McGlone, Yumo Liu, and Nidhin Kurian Kalarickal. 2020. “High Electron Density β-(Al0.17Ga0.83)2O3/Ga2O3 Modulation Doping Using an Ultra-Thin (1 Nm) Spacer Layer.” Journal of Applied Physics 127 (June): 215706. doi:10.1063/5.0005531.