Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVD

Bilayers composed from a YSZ or CeO 2 buffer layer and a YBCO film were in situ grown on monocrystalline sapphire, MgO. silicon, vicinally polished sapphire and MgO substrates by single source pulsed injection CVD. Zr. Ce. Y. Ba and Cu 2,2,6,6-tetramethyl-3,5-heptandionates dissolved in organic solvent were used for film deposition. CeO 2 /YBCO bilayers on sapphire were grown epitaxially and exhibited critical current densities up to 10 6 A/cm 2 at 77 K. YSZ and CeO 2 buffer layers on MgO substrates did not improved the properties of YBCO layers compared with YBCO films deposited directly on MgO surface; however, interesting microstructural properties of these heterostructures were found. Homogeneous YSZ films were also deposited on large Si substrates (3 inches in diameter).