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Very low-voltage (0.8 V) CMOS receiver frontend for 5 GHz RF applications

Authors :
K.H. Lee
T.K. Tsang
Mourad N. El-Gamal
Source :
IEE Proceedings - Circuits, Devices and Systems. 149:355-362
Publication Year :
2002
Publisher :
Institution of Engineering and Technology (IET), 2002.

Abstract

A fully integrated low-voltage RF receiver front end for 5 GHz radio applications, implemented in a standard 0.18 μm CMOS technology, is presented. The receiver consists of a differential low noise amplifier, an active mixer, and a quadrature voltage-controlled oscillator. The complete receiver is packaged in a standard 24-pin ceramic flat pack and consumes 56 mW from a 0.8 V supply. Measurement results show that the receiver has an overall noise figure of 7 dB, a −1 dBm input-referred IIP3, and 22 dB of image rejection. A stand-alone single-ended version of the LNA is also presented. Simple mechanisms for tuning the gain and the centre frequency of the LNA are proposed. With a supply voltage of 1 V, the LNA provides a power gain of 13.2 dB, has a noise figure of 2.5 dB, and over 10 dB of gain control and 360 MHz of frequency tuning. The LNA still operates well from a supply voltage as low as 0.7 V, providing a power gain of 7 dB.

Details

ISSN :
13597000 and 13502409
Volume :
149
Database :
OpenAIRE
Journal :
IEE Proceedings - Circuits, Devices and Systems
Accession number :
edsair.doi...........5b1e4cb99665dac71af0423c8f2d7d08
Full Text :
https://doi.org/10.1049/ip-cds:20020605