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A novel nondestructive testing method for amorphous Si–Sn–O films
- Source :
- Journal of Physics D: Applied Physics. 49:505102
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- Traditional methods to evaluate the quality of amorphous silicon-substituted tin oxide (a-STO) semiconductor film are destructive and time-consuming. Here, a novel non-destructive, quick, and facile method named microwave photoconductivity decay (μ-PCD) is utilized to evaluate the quality of a-STO film for back channel etch (BCE) thin-film transistors (TFTs) by simply measuring the D value and peak reflectivity signal. Through the μ-PCD method, both optimum deposition procedure and optimal annealing temperature are attained to prepare a-STO film with superior quality. The a-STO TFTs are fabricated by the obtained optimum procedure that exhibits a mobility of 8.14 cm2 V−1 s−1, a I on/I off ratio of 6.07 × 109, a V on of -1.2 V, a steep subthreshold swing of 0.21 V/decade, a low trap density (D t) of 1.68 × 1012 eV−1 cm−2, and good stability under the positive/negative gate-bias stress. Moreover, the validity of the μ-PCD measurement for a-STO films is verified by x-ray photoelectron spectroscopy, Hall effect measurement, and the performance of STO TFTs measured by traditional methods. The non-destructive μ-PCD method sheds light on the fast optimization of the deposition procedure for amorphous oxide semiconductor films with excellent quality.
- Subjects :
- 010302 applied physics
Materials science
Acoustics and Ultrasonics
Silicon
business.industry
Annealing (metallurgy)
Photoconductivity
chemistry.chemical_element
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
Tin oxide
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Amorphous solid
Semiconductor
chemistry
0103 physical sciences
Optoelectronics
Thin film
0210 nano-technology
business
Tin
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 49
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........5b6c31cae2bf5ef33139296880d75cb4