Bias-stress instabilities in low-temperature thin-film transistors made of Al2O3 and ZnO films deposited by PEALD

Subjects

Subjects :

Electrical and Electronic Engineering
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials

Details

ISSN :

01679317

Volume :

259

Database :

OpenAIRE

Journal :

Microelectronic Engineering

Accession number :

edsair.doi...........5bf97b74a8c0825dc4fef04e6142388e

Full Text :

https://doi.org/10.1016/j.mee.2022.111788