High voltage vacuum power switch with diamond electron emitters

Authors :: H. Ohashi
D. Takeuchi
T. Makino
Satoshi Koizumi
Masahiko Ogura
Hiromitsu Kato
S. Yamasaki
H. Okushi
Source :: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Publication Year :: 2014
Publisher :: IEEE, 2014.
Abstract: This paper summarizes our recent achievement on a 10kV vacuum switch with negative electron affinity (NEA) of diamond PIN electron emitters (PIN-emitters), a model for such vacuum switch with PIN-emitters, and a recent progress on reduction of operation voltage of the PIN-emitters with use of hopping conduction of the heavily-doped substrate. These prove a principle of vacuum power switches over 100 kV with an efficiency beyond 99.9%.

Subjects :: Materials science
business.industry
Diamond
High voltage
Electron
Substrate (electronics)
engineering.material
Thermal conduction
Power (physics)
Vacuum switch
Condensed Matter::Superconductivity
engineering
Physics::Accelerator Physics
Optoelectronics
business
Voltage

Database :: OpenAIRE
Journal :: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Accession number :: edsair.doi...........5c7e4cea0b62f6415fb9fe7a53f3dd05
Full Text :: https://doi.org/10.1109/ispsd.2014.6856014