Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

As one of promising metal gate materials, PVD TiN has widely been studied for conventional bulk-planar CMOS devices due to its high purity [1, 2]. However, there have been no systematical studies regarding the PVD TiN gate work function (tin) control using the nitrogen gas flow ratio (Rfrac12 = N2/(Ar+N2)) in the sputtering. In this paper, we present the Rfrac12 controlled tunable work function PVD TiN gate technology and its application for FinFET CMOS.